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STB26NM60ND |
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| Part Number | STB26NM60ND |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolution... |
| Features |
Order codes VDS @ Tjmax RDS(on) max ID
STB26NM60ND
STF26NM60ND STP26NM60ND
650 V
0.175 21 A
STW26NM60ND
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities ' 7$% Applications • Switching applications * 6 !-V Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior s... |
| Document |
 STB26NM60ND Data Sheet
PDF 1.27MB |
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Desde 2024. D4U Semiconductor.
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