| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss App |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z s s s s s s Package RDS(on) <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156 VDSS 600 600 600 600 600 V V V V V 3 1 2 1 2 3 3 2 1 TO-220 TO |
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STMicroelectronics |
N-channel Power MOSFET Order code STFH10N60M2 VDS @ TJmax 650 V RDS(on) max 0.60 Ω ID 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Wide distance of 4.25 mm between the pins Applications Sw |
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STMicroelectronics |
4A TRIACS Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 4 600 to 800 3 to 25 Unit A V mA A2 G A1 Description The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, |
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STMicroelectronics |
short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Appl |
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STMicroelectronics |
N-channel MOSFET Order code STL110NS3LLH7 VDS 30 V RDS(on) max ID 0.0034 Ω 120 A • Very low on-resistance • Very low Qg • High avalanche ruggedness • Embedded Schottky diode Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, |
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STMicroelectronics |
N-channel MOSFET Order code STL110NS3LLH7 VDS 30 V RDS(on) max ID 0.0034 Ω 120 A • Very low on-resistance • Very low Qg • High avalanche ruggedness • Embedded Schottky diode Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Industry’s lowest RDS(on) Industry’s best figure |
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STMicroelectronics |
N-Channel MOSFET PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8 |
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STMicroelectronics |
N-channel Power MOSFET TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P' 7$% - Obsole* roduct(s)6 $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650 V < 0.55 Ω ID 10 A PTOT 70 W • 100% avalanche tested • Low input capacitance |
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STMicroelectronics |
N-CHANNEL Zener-Protected SuperMESH MOSFET TYPE STP10NK50Z STF10NK50Z ■ ■ ■ ■ ■ ■ STP10NK50Z STF10NK50Z Figure 1: Package ID 9A 9 A(*) Pw 125 W 30 W VDSS 500 V 500 V RDS(on) < 0.7 Ω < 0.7 Ω TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZ |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP310N10F7 VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device utiliz |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Industry’s lowest RDS(on) Industry’s best figure |
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STMicroelectronics |
N-Channel Power MOSFET Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package ID |
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STMicroelectronics |
Standard 1A Triacs • On-state rms current, IT(RMS) 1 A • Repetitive peak off-state voltage, VDRM/VRRM 600 or 800 V • Triggering gate current, IGT (Q1) 3 to 25 mA Applications • AC switching • Home appliances Description The Z01 series is suitable for general |
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STMicroelectronics |
Standard 1A Triacs • On-state rms current, IT(RMS) 1 A • Repetitive peak off-state voltage, VDRM/VRRM 600 or 800 V • Triggering gate current, IGT (Q1) 3 to 25 mA Applications • AC switching • Home appliances Description The Z01 series is suitable for general |
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Desde 2024. D4U Semiconductor.
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