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STP110N8F6 |
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| Part Number | STP110N8F6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order... |
| Features |
Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W
3 2 1
TO-220
Figure 1. Internal schematic diagram
' 7$%
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• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STP110N8F6 $0Y Table 1. Device summary Marking Package 110N8F6 TO-220 Packing Tube D... |
| Document |
 STP110N8F6 Data Sheet
PDF 531.59KB |
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Desde 2024. D4U Semiconductor.
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