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Stanson Technology |
MOSFET l -30V/-9.2A, RDS(ON) =-22mΩ (Typ.) @VGS =-10V l -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKIN |
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STANSON |
P-Channel Enhancement Mode MOSFET z -40V/-5.6A, RDS(ON) = 55mΩ @VGS = -10V z -40V/-5.2A, RDS(ON) = 80mΩ @VGS = -4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 OR |
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STANSON |
P-Channel Enhancement Mode MOSFET l -100V/-15A, RDS(ON) = 36mΩ (Typ.) @VGS = -10V l -100V/-10A, RDS(ON) = 40mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-220 package design ABSOULTE MAXI |
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Stanson Technology |
Dual P-Channel Enhancement Mode MOSFET l -30V/-7.2A, RDS(ON) = 20mΩ (Typ.) @VGS =-10V l -30V/-5.6A, RDS(ON) = 25mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP |
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STANSON |
P Channel Enhancement Mode MOSFET -30V/-5.6A, RDS(ON) = 60mΩ @VGS = -10V -30V/-5.0A, RDS(ON) = 77mΩ @VGS = -6.0V -30V/-4.4A, RDS(ON) = 100mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package |
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STANSON |
P Channel Enhancement Mode MOSFET � -30V/-5.7A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V � -30V/-5.0A, RDS(ON) = 50mΩ @VGS = -4.5V � -30V/-4.4A, RDS(ON) = 65mΩ @VGS = -2.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capabili |
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STANSON |
P Channel Enhancement Mode MOSFET � -20V/-7.2A, RDS(ON) = 40mΩ @VGS = -4.5V � -20V/-5.2A, RDS(ON) = 52mΩ @VGS = -2.5V � -20V/-3.6A, RDS(ON) = 62mΩ @VGS = -1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � S |
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STANSON |
P-Channel Enhancement Mode MOSFET -20V/-2.8A, RDS(ON) = 90m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 110m-ohm @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source |
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STANSON |
P-Channel Enhancement Mode MOSFET -40V/-10.0A, RDS(ON) = 32mΩ (Typ.) @VGS =-10V -40V/-8.0A, RDS(ON) = 38mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDER |
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STANSON |
P-Channel Enhancement Mode MOSFET l -60V/-10.0A, RDS(ON) = 55mΩ (Typ.) @VGS =-10V l -60V/-5.0A, RDS(ON) = 73mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SO |
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STANSON |
P-Channel Enhancement Mode MOSFET l -100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.) @VGS = -10V l -100V/-0.5.0A, RDS(ON) = 600m-ohm @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23-6L package desig |
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Stanson Technology |
MOSFET TO-252 TO-251 -30V/-25.0A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V -30V/-16.0A, RDS(ON) = 78mΩ @VGS =-5.0V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design |
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Stanson Technology |
MOSFET -60V/-20.0A, RDS(ON) = 20mΩ(typ.) @VGS = -10V -60V/-20.0A, RDS(ON) = 27mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design ( STP601D ) PART |
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STANSON |
P-Channel Enhancement Mode MOSFET -20V/-10.0A, RDS(ON) = 30mΩ @VGS = -4.5V -20V/-8.6A, RDS(ON) = 35mΩ @VGS = -2.5V -20V/-7.6A, RDS(ON) = 48mΩ @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 packag |
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STANSON |
P-Channel Enhancement Mode MOSFET � -25V/-7.5A, RDS(ON) = 45mΩ @VGS = -10V � -25V/-6.0A, RDS(ON) = 55mΩ @VGS = -6.0V � -25V/-5.4A, RDS(ON) = 65mΩ @VGS = -4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SO |
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STANSON |
Dual P-Channel Enhancement Mode MOSFET � -20V/-8.5A, RDS(ON) = 20mΩ (Typ.) @VGS =-4.5V � -20V/-8.0A, RDS(ON) = 25mΩ @VGS = -2.5V � -20V/-5.0A, RDS(ON) = 35mΩ @VGS = -1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capabili |
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STANSON |
Dual P-Channel Enhancement Mode MOSFET -30V/-5.2A, RDS(ON) = 60mΩ @VGS =-10V -30V/-4.5A, RDS(ON) = 80mΩ @VGS = -6.0V -30V/-3.8A, RDS(ON) = 90mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package d |
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STANSON |
Dual P-Channel Enhancement Mode MOSFET � -30V/-5.2A, RDS(ON) = 38mΩ (Typ.) @VGS =-10V � -30V/-4.0A, RDS(ON) = 52mΩ @VGS = -4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP |
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STANSON |
P-Channel Enhancement Mode MOSFET TO-252 TO-251 -40V/-12.0A, RDS(ON) = 18mΩ (Typ.) @VGS = -10V -40V/-8.0A, RDS(ON) = 24mΩ @VGS =-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design |
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STANSON |
P-Channel Enhancement Mode MOSFET l -60V/-10.0A, RDS(ON) = 70mΩ（Typ.） @VGS = -10V l -60V/-5.0A, RDS(ON) = 80mΩ（Typ.） @VGS = -10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252package design PART MARKI |
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Desde 2024. D4U Semiconductor.
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