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SamHop Microelectronics |
STD2030PLS R JC R JA 3 50 C /W C /W S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = |
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ST Microelectronics |
N-CHANNEL MOSFET (*) ID IDM( •) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total |
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STMicroelectronics |
N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D |
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ST Microelectronics |
N-CHANNEL MOSFET at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 2 1.3 8 60 0.48 4 –65 to 150 150 Unit V V V A A A W W/°C V |
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STMicroelectronics |
Single-Chip Worldwide iDTV Processor ics and On-Screen Display ■ Auxiliary Video/Graphics Sub-System for Monitor output ■ Exhaustive set of peripherals for DTV Chassis Control ■ DDR333 Unified Memory Interface (LMI) ■ Programmable External Memory Interface (EMI) ■ CRT and Flat Panel Dis |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD20NF06LAG VDS 60 V RDS(on) max. 40 mΩ ID 24 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge PTOT 60 W Applications G(1) • Switching applications S(3) Description AM01475v1_noZen T |
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Silan Microelectronics |
600V DP MOS POWER TRANSISTOR 14A,600V, RDS(on)(typ.)=0.25@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability ORDERING INFORMATION Part No. SVSP14N60TD2 SVSP14N60FJDD2 SV |
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STMicroelectronics |
Gate Driver with VReg and Two Point Regulator ption Name Pin Number Type VCC VOUT IN GATE GND VSUP VCAP 1 Power supply 2 Analog output 4 Digital input 5 Analog output 6 Power supply 7 Power supply 8 Power supply Function Supply capacitor and startup resistor +3.3V (TD220) or + |
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ST Microelectronics |
N-CHANNEL MOSFET TYPE STF2NK60Z STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 I I I I I I Figure 1: Package ID 1.4 A 0.4 A 1.4 A 1.4 A Pw 20 3W 45 W 45 W <8Ω <8Ω <8Ω <8Ω VDSS 600 V 600 V 600 V 600 V RDS(on) 3 TYPICAL RDS(on) = 7.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMP |
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ST Microelectronics |
N-CHANNEL MOSFET s) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 2.2 1.4 8.8 45 0 |
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ST Microelectronics |
N-CHANNEL MOSFET SIZE™ ” POWER MOSFET TYPE ST D20NE06 s s s s V DSS 60 V R DS(on) < 0.040 Ω ID 20 A s TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE |
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ST Microelectronics |
N-CHANNEL MOSFET N s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( •) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 o |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor E CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V |
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SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET U/D2040P L P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = -250uA V DS = -32V, V GS= 0V V GS = 20V, V |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor LECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.DataSheet4U.com Symbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, I |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor , Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D2555NL N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0 |
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STMicroelectronics |
N-channel Power MOSFET Type STD26NF10 ■ ■ ■ ■ VDSS 100V RDS(on) < 0.038Ω ID 25A Exceptional dv/dt capability Application oriented characterization 100% avalanche tested Application oriented characterization DPAK 3 1 Description This Power MOSFET series realized with |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD2NK100Z 1000 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 8.5 Ω ID 1.85 A Applications • Switching applications Description AM01476v1_tab This high-vol |
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SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS |
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Desde 2024. D4U Semiconductor.
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