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STD20N06 |
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| Part Number | STD20N06 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device... |
| Features |
N
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( •) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 20 20 14 80 60 0.4 -65 to 175 175 Unit V V V A A A W W/o C o o C C (*) Current limited by the package ( •) Pulse width limited by safe operating area (*) Marc... |
| Document |
 STD20N06 Data Sheet
PDF 174.94KB |
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Desde 2024. D4U Semiconductor.
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