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STD20NE06 |
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| Part Number | STD20NE06 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugge... |
| Features |
(continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 60 60 ± 20 20** 17 80 50 0.33 7 -65 to 175 175
( 1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V A A A W W/ o C V/ ns
o o
C C
( •) Pulse width limited by safe operating area (**) Value limited only by the package January 1998 1/8 STD20NE06 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance... |
| Document |
 STD20NE06 Data Sheet
PDF 96.14KB |
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