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STMicroelectronics |
STF3NK80Z 3 2 1 TO-220FP D(2) Order code VDS STF3NK80Z 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 4.5 Ω ID 2.5 A G(1) • Switching applications Description This |
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STMicroelectronics |
STF21NM50N Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P ■ 100% avalanche tested te ■ |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STF45N10F7 VDS 100 V RDS(on) max.(1) 0.018 Ω ID 30 A PTOT 25 W 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram ' Description th This d |
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STMicroelectronics |
N-channel Power MOSFET Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested Low input capacitance and gate charge Low gate input resist |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF20N65M5 STFI20N65M5 VDS @ TJmax RDS(on) max 710 V 0.19 Ω ID 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching a |
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STMicroelectronics |
N-channel Power MOSFET Order code STF260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Descrip |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STF20N95DK5 950 V 330 mΩ 18 A • Fast-recovery body diode • Best RDS(on) x area • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness Applications • Switc |
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ST Microelectronics |
N-CHANNEL MOSFET NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE March 2004 1/12 STB20NM60A-1/STP20NM60A/STF20NM60A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. STF11N65M2 650 V 0.68 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 7A PTOT 25 W D(2) G(1) S(3) Applications • Switching applications |
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STMicroelectronics |
N-channel Power MOSFET M50D B20NM50FD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL November 2003 1/11 STP20NM50FD - STF20NM50D - STB20NM50FD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP20NM50FD STB20NM50FD VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1 |
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STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Intern |
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STMicroelectronics |
N-channel Power MOSFET 23 1 TO-220FP D(2) Order code VDS STF20N90K5 900 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on ) max. 0.25 Ω ID 20 A Applications • Switc |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) max RDS(on)* Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 20 A 20 A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input |
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ST Microelectronics |
N-CHANNEL MOSFET TYPE STD20N20 STF20N20 STP20N20 s s s s Figure 1: Package Id 18 A 18 A 18 A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS 200 V 200 V 200 V RDS(on) < 0.125 Ω < 0.125 Ω < 0.125 Ω TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100% AV |
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ST Microelectronics |
N-CHANNEL MOSFET Type STF20NM60D STP20NM60FD STW20NM60FD ■ ■ ■ ■ ■ VDSS 600V 600V 600V RDS(on) <0.29Ω <0.29Ω <0.29Ω ID 20A 20A 20A Pw 192W 45W 214W TO-247 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-channel Power MOSFET Type STB19NF20 STD19NF20 STF19NF20 STP19NF20 VDS RDS(on) max. 200 V 200 V 200 V 200 V 0.16 Ω 0.16 Ω 0.16 Ω 0.16 Ω ID 15 A 15 A 15 A 15 A PTOT 90 W 90 W 25 W 90 W 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% • E |
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STMicroelectronics |
N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D |
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ST Microelectronics |
Power MOSFET Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 16 A 16 A 16 A 16 A 16 A ■ 100% avalanche tested ■ Low input capacitance |
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STMicroelectronics |
Low voltage high performance PNP power transistor ■ ■ ■ Low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications ■ ■ DC-DC converter, voltage regulation General purpose switching equipment SOT-89 Description Figure 1. The device is a PN |
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Desde 2024. D4U Semiconductor.
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