F21NM50N |
Part Number | F21NM50N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | - OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the... |
Features |
Type
VDSS (@Tjmax)
RDS(on)
ID
STB21NM50N
)STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N
550V 550V 550V 550V 550V
< 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω
18A 18A 18A(1) 18A 18A
rod1. Limited by wire bonding
P ■ 100% avalanche tested te ■ Low input capacitance and gate charge le ■ Low gate input resistance bsoDescription - OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the world's lowest on-resistance and dgate charge. It is therefore su... |
Document |
F21NM50N Data Sheet
PDF 448.99KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | F21NM60N |
STMicroelectronics |
STF21NM60N | |
2 | F2114 |
Fairchild Semiconductor |
1024 x 4 Static RAM | |
3 | F2114L |
Fairchild Semiconductor |
1024 x 4 Static RAM | |
4 | F2139BA |
MTRONPTI |
Clock Oscillator | |
5 | F21F60CPM |
SHINDENGEN |
Power MOSFET | |
6 | F21M08A |
ECM |
Monolithic Crystal Filters |