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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology ion Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 12 186 200 -65 to +150 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W January, 28 2003 1/4 LET9085 ELECTRICA |
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STMicroelectronics |
TELETEXT DECODER 1 integrated chip which extracts Teletext information embedded in a composite video signal. Up to 4 pages of display data can be stored in internal memory. A complete system also comprises a microprocessor controlling the STV5342 via a 2-wires serial |
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ST Microelectronics |
MONOCHIP TELETEXT AND VPS DECODER WITH 4 INTEGRATED PAGES allow selectable master/slave synchronization configurations.The STV5347 also supports facilities for reception and display of current level protocol data. June 1997 STTV/LFB FFB VSSD R G B RGB REF BLAN COR ODD/EVEN 1/22 STV5347 - STV5347/H - STV5 |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology g Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 18 289 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.45 °C/W January, 28 2003 1/4 LET8180 ELECTRICAL SPECIFICATION (TCASE = 2 |
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STMicroelectronics |
ELETRONIC TWO-TONE RINGER the AC ring signal and the circuit is designed so that noise on the line or variations of the ringing signal cannot affect the correct operation of the devices. The output bridge configuration allows to use a high impedance transducer with acoustica |
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STMicroelectronics |
Complete DDR2/3 memory power supply controller switching Switching section (VDDQ) www.DataSheet4U.com – 4.5V to 28V input voltage range – 0.9V, ±1% voltage reference – 1.8V (DDR2) or 1.5V (DDR3) fixed output voltages – 0.9V to 2.6V adjustable output voltage – 1.237V ±1% reference voltage availabl |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology wer Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 130 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.0 °C/W January, 24 2003 1/4 L |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology on Temperature Storage Temperature Parameter Value 65 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance 2.0 °C/W 1/5 January, 24 2003 LET20030C ELECTRICAL SPECIFICATION |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 TBD 150 -65 to +150 Unit V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction - |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology emperature Parameter Value 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 2 °C/W January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 |
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STMicroelectronics |
ELETRONIC TWO-TONE RINGER the AC ring signal and the circuit is designed so that noise on the line or variations of the ringing signal cannot affect the correct operation of the devices. The output bridge configuration allows to use a high impedance transducer with acoustica |
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STMicroelectronics |
QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power October 1998 MOS off at a minimum junction temperature of 140 oC. When |
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ST Microelectronics |
COMPLETE TV SOUND CHANNEL S RIPPLE REJECTION SUPPLY VOLTAGE GROUND GROUND AF OUTPUT COMPENSATION AF FEEDBACK 3190-01.EPS December 1992 1/9 TDA3190 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VS Vi Io Io Ptot Tstg, Tj Parameter Supply Voltage (pin 10) Input Signal Voltag |
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Etek Microelectronics |
Provides complete Li+ charger protection against Input over-voltage include accurate Voltage divider, reverse current blocking from OUT to ACIN and OTP protection. The ET9516/A provides complete Li+ charger protections, and saves the external MOSFET and Schottky diode for the charger of cell phone’s PMIC. The above |
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STMicroelectronics |
RF power transistor • Excellent thermal stability • Common source configuration • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz • BeO free package • In compliance with the 2002/95/EC European directive Description The LET16045C is a common source N-channel enhancement- |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package and offers excellent RF performances and ease of assembly. ORDER CODE LET90015 PowerSO-10RF (formed lead) BRANDING LET90015 PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN129 |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C THERMAL |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package n specially optimized for RF needs and offers excellent RF performances and ease of assembly. PIN CONNECTION ORDER CODE LET9045S PowerSO-10RF (straight lead) BRANDING LET9045S SOURCE GATE DRAIN Mounting recommendations are available in www.st.com |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology ture Storage Temperature Parameter Value 65 -0.5 to +15 7 118 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.1 °C/W 1/5 November, 4 2002 LET9060C ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V |
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Desde 2024. D4U Semiconductor.
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