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LET8180 |
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| Part Number | LET8180 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET81... |
| Features |
g Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 18 289 200 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.45 °C/W
January, 28 2003
1/4
LET8180
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 32 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 10 µA VDS = 32 V VDS = 0 V ID = TBD ID = 3 A ID = 3 A VDS = 32 V VDS = 32 V VDS = 32 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 2.5 0.28 2.6 TBD 70 Min. 65... |
| Document |
 LET8180 Data Sheet
PDF 33.56KB |
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