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LET20015 |
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| Part Number | LET20015 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The LET20015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26... |
| Features |
and offers excellent RF performances and ease of assembly.
ORDER CODE LET90015 PowerSO-10RF (formed lead) BRANDING LET90015
PIN CONNECTION
SOURCE
GATE
DRAIN
Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature
°
Parameter
Value 65 -0.5 to +15 2 TBD 165 -65 to +175
Unit V V A W °C °C
THERMAL DATA (TCASE = 70 °C)
Rth(j-c) Junction -... |
| Document |
 LET20015 Data Sheet
PDF 67.53KB |
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