ST Microelectronics BYV Hoja de datos

No.	parte #	Fabricante	Descripción
1	BYV10-40	STMicroelectronics	SMALL SIGNAL SCHOTTKY DIODES ERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C T
2	BYV255V-200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rect
3	BYV10-60	STMicroelectronics	SMALL SIGNAL SCHOTTKY DIODE A Tj = 25°C Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 0.7 1 V Unit mA DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow
4	BYV255V	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rect
5	BYV52-200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti
6	BYV52PI-200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti
7	BYV54V-200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54
8	BYV52HR	ST Microelectronics	Aerospace 30 A - 200 V fast recovery rectifier ■ ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses High surge current capability High avalanche energy capability Hermetic package Target radiation qualification: – 150 krad (Si) low dose rate – 3 Mrad high dose rate Package mass:
9	BYV52	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti
10	BYV52PI	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti
11	BYV541V	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54
12	BYV541V-200	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54
13	BYV54V	STMicroelectronics	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54
14	TMBYV10-40	STMicroelectronics	SMALL SIGNAL SCHOTTKY DIODES < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 Unit mA 10 Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority c
15	TMBYV10-60	STMicroelectronics	SMALL SIGNAL SCHOTTKY DIODE in. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.7 1 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority carrier conductio
16	BYV54HR	ST Microelectronics	Aerospace 40 A - 200 V fast recovery rectifier ■ ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses High surge current capability High avalanche energy capability Hermetic package Target radiation qualification: – 150 krad (Si) low dose rate – 1 Mrad high dose rate Package mass: