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SHANGHAI BELLING |
N-channel Enhancement Mode Power MOSFET w.belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV4N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs ID |
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SHANGHAI BELLING |
N-channel Enhancement Mode Vetical D-MOS Transistor Very fast switching Logic level compatible Applications Relay driver High speed line driver Logic level translator. Size Chip size: 495µm ×490µm Chip thickness: 220±20µm. structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy S |
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SHANGHAI BELLING |
P-channel vertical MOSFET |
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SHANGHAI BELLING |
Vertical N-channel MOSFET |
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SHANGHAI BELLING |
N-channel Enhancement Mode Power MOSFET x. http://www.belling.com.cn -1Total 6 Pages Value 5.5 62.5 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 2008.08.08 BLV2N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDS |
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Desde 2024. D4U Semiconductor.
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