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SEMIPOWER |
MOSFET TO-220 ■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolo |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAM |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAM |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAM |
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SEMIPOWER |
N-Channel MOSFET TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVDSS : 650V High ruggedness Low RDS(ON) (Typ 0.36Ω)@VGS=10V Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charger, PC Power 12 3 12 3 12 3 |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.52Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolo |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with a |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAM |
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SEMIPOWER |
MOSFET TO-220 TO-220F ■ High ruggedness ■ RDS(ON) (Max0.25Ω)@VGS=10V ■ Gate Charge (Typical 43nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced |
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SEMIPOWER |
MOSFET TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolo |
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SEMIPOWER |
MOSFET TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology |
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SEMIPOWER |
MOSFET TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is |
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SEMIPOWER |
N-channel TO-220F MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.85 Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3. Source General Description This power MOS |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.48Ω)@VGS=10V ■ Gate Charge (Typ 32nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology o |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.32Ω)@VGS=10V ■ Gate Charge (Typ 66 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 123 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of |
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SEMIPOWER |
MOSFET TO-220 ■ High ruggedness ■ RDS(ON) (Max 7.4m Ω)@VGS=10V ■ Gate Charge (Typ 127nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolo |
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SEMIPOWER |
MOSFET TO-220 ■ High ruggedness ■ RDS(ON) (Max 5.1m Ω)@VGS=10V ■ Gate Charge (Typ 143nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolog |
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SEMIPOWER |
MOSFET TO-220 ■ High ruggedness ■ RDS(ON) (Max 5.6m Ω)@VGS=10V ■ Gate Charge (Typ 160nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolog |
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Desde 2024. D4U Semiconductor.
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