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SW1N60D |
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| Part Number | SW1N60D |
| Manufacturer | SEMIPOWER |
| Description | This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate cha... |
| Features |
TO-251
TO-92
■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 1A RDS(ON) ... |
| Document |
 SW1N60D Data Sheet
PDF 623.50KB |
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