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SW15N50 |
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| Part Number | SW15N50 |
| Manufacturer | SEMIPOWER |
| Description | This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate cha... |
| Features |
■ High ruggedness ■ RDS(ON) (Max 0.32Ω)@VGS=10V ■ Gate Charge (Typ 66 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 123 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS ... |
| Document |
 SW15N50 Data Sheet
PDF 513.33KB |
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Desde 2024. D4U Semiconductor.
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