Renesas K29 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SK2937	Renesas	Silicon N Channel MOS FET • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005
2	K2956	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline REJ03G1056-0401 (Previous: ADE-208-566B) Rev.4.01 Apr 27, 2006 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) D G 1. Gate 2. Drain 3. S
3	2SK2936	Renesas	Silicon N Channel MOS FET • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM)
4	3SK296	Renesas	N-Channel Dual-Gate MOSFET
5	2SK2978	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code: PLZZ0004CA-A (Pack
6	2SK2931	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1045-0500 (Previous: ADE-208-554C) Rev.5.00 Sep 07, 20
7	2SK2957L	Renesas	N-Channel MOSFET • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3.
8	2SK2957	Renesas	N-Channel MOSFET • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3.
9	2SK2957S	Renesas	N-Channel MOSFET • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3.
10	2SK2955	Renesas	Silicon N Channel MOS FET • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.4.00 Sep 07,
11	K2936	Renesas	Silicon N Channel MOS FET • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM)
12	2SK2956	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline REJ03G1056-0401 (Previous: ADE-208-566B) Rev.4.01 Apr 27, 2006 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C •FM) D G 1. Gate 2. Drain 3. S
13	2SK2925S	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)
14	2SK2980	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 G 2 Note: Marking is “ZZ –” REJ03G1061-0400 (Previous: ADE-2
15	K2937	Renesas Technology	2SK2937 • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet4U.com R
16	2SK2928	Renesas	N-Channel MOSFET • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1042-0400 (Previous: ADE-208-551B) Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (
17	2SK2925L	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)
18	2SK2925	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)
19	K2980	Renesas	Silicon N-Channel MOSFET • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 G 2 Note: Marking is “ZZ –” REJ03G1061-0400 (Previous: ADE-2
20	K2957	Renesas	2SK2957 • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3.