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2SK2978 |
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| Part Number | 2SK2978 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | 2SK2978 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive de... |
| Features |
• Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 D 1. Gate 2. Drain G 3. Source 4. Drain Note: Marking is “ZY” S *UPAK is a trademark of Renesas Technology Corp. Rev.5.00 Sep. 07, 2005 page 1 of 6 2SK2978 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Bo... |
| Document |
 2SK2978 Data Sheet
PDF 77.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2972 |
VBsemi |
N-Channel MOSFET |
|
| 2 | 2SK2972 |
Toshiba |
N-Channel MOSFET |
|
| 3 | 2SK2973 |
Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
|
| 4 | 2SK2974 |
Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
|
| 5 | 2SK2975 |
Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
|
| 6 | 2SK2976 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 7 | 2SK2977LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK2978 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 10 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
Desde 2024. D4U Semiconductor.
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