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2SK2957S |
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| Part Number | 2SK2957S |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate ... |
| Features |
• Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2957(L), 2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1... |
| Document |
 2SK2957S Data Sheet
PDF 162.14KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2957 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 2 | 2SK2957 |
Renesas |
N-Channel MOSFET |
|
| 3 | 2SK2957L |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2957L |
Renesas |
N-Channel MOSFET |
|
| 5 | 2SK2957S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 6 | 2SK2951 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
Desde 2024. D4U Semiconductor.
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