Renesas HAF Hoja de datos

No.	parte #	Fabricante	Descripción
1	R5F100LHAFA	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
2	HAF2012L	Renesas Technology	Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS000
3	HAF1008L	Renesas	P-Channel MOSFET • Logic level operation (-4 to -6 V Gate drive) • High endurance capability against to the short circuit • Built –in the over temperature shut –down circuit • Latch type shut –down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor
4	HAF2012S	Renesas Technology	Silicon N Channel MOS FET Series Power Switching • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS000
5	R5F101LHAFC	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
6	R5F100PHAFB	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
7	HAF2017L	Renesas	Silicon N-Channel Power MOS FET • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shutdown circuit • Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperatur
8	HAF1010RJ	Renesas	P-Channel MOSFET Logic level operation to ( –4 to –6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circu
9	R5F100FHAFP	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
10	R5F101JHAFA	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
11	R5F101LHAFB	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
12	R5F101MHAFA	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
13	R5F101MHAFB	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
14	R5F101PHAFB	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
15	R5F100PHAFA	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
16	R5F100SHAFB	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
17	R5F101SHAFB	Renesas	16-Bit Single-Chip Microcontrollers Ultra-low power consumption technology  VDD = single power supply voltage of 1.6 to 5.5 V  HALT mode  STOP mode  SNOOZE mode RL78 CPU core  CISC architecture with 3-stage pipeline  Minimum instruction execution time: Can be changed from high s
18	HAF1008S	Renesas	P-Channel MOSFET • Logic level operation (-4 to -6 V Gate drive) • High endurance capability against to the short circuit • Built –in the over temperature shut –down circuit • Latch type shut –down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor
19	HAF2017S	Renesas	Silicon N-Channel Power MOS FET • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shutdown circuit • Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperatur
20	HAF2021S	Renesas	Silicon N-Channel MOSFET • Logic level operation (6 V Gate drive) • High endurance capability against to the short circuit • Built –in the over temperature shut –down circuit • Latch type shut –down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temper