HAF2012S Renesas Technology Silicon N Channel MOS FET Series Power Switching Datasheet. existencias, precio

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HAF2012S

Renesas Technology
HAF2012S
HAF2012S HAF2012S
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Part Number HAF2012S
Manufacturer Renesas (https://www.renesas.com/) Technology
Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to...
Features



• Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 1 1 2 3 D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 1 of 9 HAF2012(L), HAF2012(S) Absolute Maximum Ratings (Ta = 25°...

Document Datasheet HAF2012S Data Sheet
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