HAF2017S Renesas Silicon N-Channel Power MOS FET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

HAF2017S

Renesas
HAF2017S
HAF2017S HAF2017S
zoom Click to view a larger image
Part Number HAF2017S
Manufacturer Renesas (https://www.renesas.com/)
Description This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shu...
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reve...

Document Datasheet HAF2017S Data Sheet
PDF 121.57KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 HAF2017
Renesas
Silicon N-Channel Power MOS FET Datasheet
2 HAF2017L
Renesas
Silicon N-Channel Power MOS FET Datasheet
3 HAF2011
Hitachi Semiconductor
Silicon N Channel MOS FET Series Power Switching Datasheet
4 HAF2011L
Hitachi Semiconductor
Silicon N Channel MOS FET Series Power Switching Datasheet
5 HAF2011S
Hitachi Semiconductor
Silicon N Channel MOS FET Series Power Switching Datasheet
6 HAF2012
Renesas Technology
Silicon N Channel MOS FET Series Power Switching Datasheet
More datasheet from Renesas
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad