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Inchange Semiconductor |
Silicon PNP Power Transistor se Breakdown Voltage IC= -1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitte |
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Power Silicon |
PNP GENERAL PURPOSE TRANSISTORS z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z HIGH DC CURRENT GAIN z LOW COLLECTOR-EMITTER SATURATION VOLTAGE .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.6 ) 0.055 (145 ) .1 6 7( 4. 2 5) . 15 5 (3 .9 4 ) |
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Weitron Technology |
PNP Silicon Epitaxial Power Transistor * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-6A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=1A ; VCE=-12V 5000 MIN |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A IC=-1A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V I |
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Inchange Semiconductor |
Silicon PNP Power Transistor R)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -12 |
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SavantIC |
SILICON POWER TRANSISTOR tter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.1mA; IE=0 IE=-0.1mA; IC=0 IC=-0.3 A;IB=-30m A IC=-0.3A ; VCE=-4V VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-0.3A ; VCE=-5V IC=-0.3A ; VCE=-5V 40 40 MIN -160 -160 -5 2SB |
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SavantIC |
SILICON POWER TRANSISTOR ge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA, IB=0 IC=-3A ,IB=-6mA IC=-7A ,IB=-14mA IC=-3A ,IB=-6mA VCB=-60V, IE=0 VEB=-5 |
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SavantIC |
SILICON POWER TRANSISTOR urrent gain Transition frequency CONDITIONS IC=-50mA; RBE=6 IC=-5mA; IE=0 IE=-5mA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-20V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V 35 35 35 MIN -50 -50 -4 TYP. 2SB856 SYMBOL V(BR)CEO V(B |
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SavantIC |
SILICON POWER TRANSISTOR C=-50µA ,IE=0 IC=-500µA ,IC=0 IC=-0.5A, IB=-50mA IC=-0.4A ; VCE=-10V VEB=-4V; IC=0 VCB=-200V; IE=0 IC=-0.15A ; VCE=-10V IC=-0.4A ; VCE=-10V IC=-0.5A; VCE=-10V,f=10MHz CONDITIONS 2SB940,2SB940A SYMBOL MIN -150 TYP. MAX UNIT V(BR)CEO Collector- |
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Inchange Semiconductor |
Silicon PNP Power Transistor ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Curr |
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Inchange Semiconductor |
Silicon PNP Power Transistor reakdown Voltage IC= -30mA; IB= 0 -130 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -5mA -3.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -100 μA IC |
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NEC |
PNP SILICON POWER TRANSISTOR • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to |
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SavantIC |
Silicon PNP Power Transistors IC=0 IC=-3A; IB=-0.3A VCB=-100V; IE=0 MIN -100 -100 -6 2SB558 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO TYP. MAX UNIT V V V www.DataSheet4U.com -1.5 V Collector cut-off current -0.1 mA IEBO hFE fT Emitter cut-off current DC current g |
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SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-10mA; IC=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR tor cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0 |
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SavantIC |
SILICON POWER TRANSISTOR on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-25mA; IB=0 IC=-7A; IB=-0.7A IC=-7A;VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=- |
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Savantic |
Silicon PNP Power Transistors ge IC=-2.0A ;IB=-0.2A VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A ICBO Collector cut-off current VCB=-50V; IE=0 IEBO Emitter cut-off current VEB=-7V; IC=0 hFE-1 DC current gain IC=-0.1A ; VCE=-1V hFE-2 DC current gain IC=-2 |
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Inchange Semiconductor |
Silicon PNP Power Transistors ltage IC= -10A; IB= -1A -2.5 V VBE(on) Base -Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -180V; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC=0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V |
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Desde 2024. D4U Semiconductor.
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