2SB1153 |
Part Number | 2SB1153 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
Features |
ltage IC= -10A; IB= -1A
-2.5 V
VBE(on) Base -Emitter On Voltage
IC= -8A; VCE= -5V
-1.8 V
ICBO
Collector Cutoff Current
VCB= -180V; IE=0
-50 μA
IEBO
Emitter Cutoff Current
VEB= -3V; IC=0
-50 μA
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
20
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
60
200
hFE-3
DC Current Gain
IC= -8A; VCE= -5V
20
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
230
pF
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
20
MHz
hFE-2Classifications Q S P 60-120 80-160 100-200 NOTICE: ISC reserves the rights to make changes of the co... |
Document |
2SB1153 Data Sheet
PDF 219.22KB |
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