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2SB1154 |
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| Part Number | 2SB1154 |
| Manufacturer | SavantIC |
| Description | ·With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Co. |
| Features | aturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-6A ;IB=-0.3A IC=-10A ;IB=-1A IC=-6A ;IB=-0.3A IC=-10A ;IB=-1A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-6A ; VCE=-2V IC=-0.5A ; VCE=-10V;f=10MHz 45 90 30 MIN -80 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE -2 hFE -3 fT 2SB1154 TYP. MAX UNIT V -0.5 -1.5 -1.5 -2.5 -10 -50 V V V V µA µA 260 30 MHz Switching times ton tstg tf Turn-on tim. |
| Datasheet |
 2SB1154 Data Sheet
PDF 179.91KB |
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2SB1154 |
| Part Number | 2SB1154 |
| Manufacturer | Panasonic Semiconductor |
| Title | PNP Transistor |
| Description | Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector cur. |
| Features | q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 21.0±0.5 15.0±0.2 Low collector to emitter saturation voltage VCE(sat) Satisf. |
2SB1154 |
| Part Number | 2SB1154 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -6A ·Complement to Type 2SD1705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power swit. |
| Features | TIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(sat)-1 Base -Emitter Saturation Voltage IC= -6A; IB= -0.3A VBE(sat)-2 Base -Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1150 |
NEC |
PNP Transistor |
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| 2 | 2SB1151 |
SeCoS |
PNP Transistor |
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| 3 | 2SB1151 |
NEC |
PNP Silicon Transistor |
|
| 4 | 2SB1151 |
UTC |
PNP SILICON TRANSISTOR |
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| 5 | 2SB1151 |
INCHANGE |
TO-252 PNP Transistor |
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| 6 | 2SB1151 |
INCHANGE |
TO-126 PNP Transistor |
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| 7 | 2SB1151 |
Savantic |
Silicon PNP Power Transistors |
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| 8 | 2SB1152 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
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| 9 | 2SB1153 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
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| 10 | 2SB1155 |
Panasonic Semiconductor |
PNP Transistor |
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Desde 2024. D4U Semiconductor.
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