| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Panasonic Semiconductor |
2SC4212 I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with on |
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Panasonic Semiconductor |
Silicon NPN Transistor 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collecto |
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Panasonic Semiconductor |
2SC5346 q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to |
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Panasonic Semiconductor |
2SC1473 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage 2SC1473 VCBO 250 V c type (Emitter ope |
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Panasonic Semiconductor |
2SC2634 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter vol |
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Panasonic Semiconductor |
2SC3611 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa- tion to th |
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Panasonic Semiconductor |
Silicon NPN Transistor Package Low collector-emitter saturation voltage VCE(sat) Code Complementary pair with 2SA0719 TO-92B-B1 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V Pin N |
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Panasonic Semiconductor |
Silicon NPN Transistor q High collector to emitter voltage VCEO. q High transition frequency fT. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit 2SC1573 250 Collector to 2SC1573A VCBO 300 V base voltage 2SC1573B 400 2SC1573 200 Collector |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q 0.4 0.8±0.1 0.4 0.2 –0.05 0.15 –0.05 +0.1 High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0. |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C |
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Panasonic Semiconductor |
2SC5440 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) 5˚ (4.0) |
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Panasonic Semiconductor |
2SC5294 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSheet4U.com 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO I |
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Panasonic Semiconductor |
2SC2406 Package Low noise voltage NV Code High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. Mini3-G1 Pin Name 1. Base / Absolute Maximum Ratin |
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Panasonic Semiconductor |
2SC3527 |
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Panasonic Semiconductor |
2SC2632 • Satisfactory linearity of forward current transfer ratio hFE 13.5±0.5 0.7 –+00..23 • High collector-emitter voltage (Base open) VCEO 0.7±0.1 • Small collector output capacitance (Common base, input open cir- cuited) Cob / ■ Absolute Maximum R |
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Panasonic Semiconductor |
Silicon NPN Transistor 3.05±0.1 • Large collector power dissipation PC • Output of 5 W can be obtained by a complementary pair with 2SA0963 ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 16.0±1.0 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter ope |
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Panasonic Semiconductor |
Silicon NPN Transistor φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open circuited) Cob • TO-126B package which requires no insulation plate for installa- tion to the he |
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Panasonic Semiconductor |
Silicon NPN Transistor • High transition frequency fT • Small collector output capacitance (Common base, input open cir- 0.40+ –00..0150 3 0.16+ –00..0160 0.4±0.2 1.50 –+00..0255 2.8 –+00..32 cuited) Cob and reverse transfer capacitance (Common emitter) Crb • Mini type pa |
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Desde 2024. D4U Semiconductor.
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