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2SC5902 NPN Transistor

2SC5902

2SC5902
2SC5902 2SC5902
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Part Number 2SC5902
Manufacturer Panasonic Semiconductor
Description Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratin.
Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5
• High breakdown voltage: VCBO ≥ 1 700 V
• Wide safe operation area
• Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚
■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 3.3±0.3 (2.0) 5.5±0.3 V sta tinu Base current IB 3 A a e cycle iscon Collecto.
Datasheet Datasheet 2SC5902 Data Sheet
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2SC5902

INCHANGE
2SC5902
Part Number 2SC5902
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage ·Built-in damper diode type ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applic.
Features MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.13A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.15A ICBO Collector Cutoff Current VCE= 1000V; VBE= 0 3.0 V 1.5 V 50 uA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 500 mA hFE DC Current Gain IC= 4.5A; VCE= 5V 5 10 Switching Times tstg Storage Time tf Fall Time IC= 4.5A, IB1= 1.13A.


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