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2SC5902 |
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| Part Number | 2SC5902 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage ·Built-in damper diode type ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
| Features |
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.13A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.15A
ICBO
Collector Cutoff Current
VCE= 1000V; VBE= 0
3.0
V
1.5
V
50 uA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
500 mA
hFE
DC Current Gain
IC= 4.5A; VCE= 5V
5
10
Switching Times
tstg
Storage Time
tf
Fall Time
IC= 4.5A, IB1= 1.13A; IB2= -2.25A;
5.0 μs 0.5 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only ... |
| Document |
 2SC5902 Data Sheet
PDF 174.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5900 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 4 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 5 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC5907 |
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| 8 | 2SC5909 |
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| 9 | 2SC5912 |
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Silicon NPN triple diffusion mesa type Power Transistor |
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| 10 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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