Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC5128 |
| Part Number | 2SC5128 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT. |
| Features | CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 0.1 mA IEBO Emitter Cutoff Current . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC512 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5121 |
Panasonic Semiconductor |
NPN Transistor |
|
| 3 | 2SC5122 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5124 |
Sanken electric |
NPN TRANSISTOR |
|
| 5 | 2SC5124 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC5124 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC5125 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5127 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5127A |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5129 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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