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| Part Number | 2SC5128 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw ·100% avalanche ... |
| Features |
CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
1.5
V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 2A; VCE= 5V
8
hFE-2
DC Current Gain
IC= 0.1A; VCE= 5V
15
fT
Current-Gain—Bandwidth Product
IE= -0.5 A; VCE= 10V
20
MHz
Switching Times
... |
| Document |
 2SC5128 Data Sheet
PDF 178.51KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC512 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5121 |
Panasonic Semiconductor |
NPN Transistor |
|
| 3 | 2SC5122 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5124 |
Sanken electric |
NPN TRANSISTOR |
|
| 5 | 2SC5124 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC5124 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|