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Panasonic |
BTL 4W X 1-Channel Power Amplifier er type with fin) Type y Silicon monolithic bipolar IC SDB00137AEB 3 AN17823A Block Diagram Pin Descriptions Pin No. Description 1 VCC 2 Channel output (+) 3 GND (output) 4 Channel output (−) 5 Standby 6 Channel input 7 GND |
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Panasonic |
GaAs N-Channel MES FET |
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Panasonic |
Silicon N-Channel MOSFET Medium breakdown voltag: VDSS = 200 V, ID = 30 A Low ON resistance, optimum for PDP panel drive Package Code TO-220C-G1 Marking Symbol: K3995 Pin Name 1. Gate 2. Drain 3. Source Drain-source surrender voltage Gate-source surrender vo |
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Panasonic Semiconductor |
Silicon N-Channel Junction FET q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.1 |
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Panasonic |
LITHIUM-ION / NNP + HRL laden and therefore require more robust and safer batteries. Increasing energy-density, however, raises the risk of overheating and ignition due to internal short-circuiting. Panasonic deploys the Heat Resistance Layer (HRL) technology to improve the |
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Panasonic |
BTL 5W x 2-Channel Power Amplifier ennu…t.gttistirynyneUp…uPpumeeReer.odidL.cd…ottauyyn…bcpp.topee…luadiftne…lacasyt…eocsnle…ticisn.…ctfaoog….rjemp.…/aetn…io/n…. ………. 5 SDB00136AEB 2 AN17821A AN17821A BTL 5.0 W × 2-channel power amplifier with standby function and volume functio |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q |
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Panasonic |
Gate resistor installed Dual N-channel MOS FET y Low drain-source ON resistance:Rds(on) typ. = 13 mΩ（VGS = 4.5 V) y Built-in gate resistor y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: 4D Packaging Embossed type (Thermo-compression sealing) : 3 |
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Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 q C |
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Panasonic Semiconductor |
N-Channel MOSFET q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 Drain to Sour |
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Panasonic Semiconductor |
N-Channel MOSFET q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0. |
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Panasonic Semiconductor |
Silicon N-Channel MOSFET 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain c |
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Panasonic |
25 W X 2-channel BTL power amplifier incorporating various protection circuits Applications y ICs for audio Package y SIL 12-pin plastic package (power type with fin) Type y Silicon monolithic bipolar IC SDB00141AEB 3 AN7580 Application Circuit Example SDB00141AEB STB “off” |
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Panasonic |
N-channel enhancement mode MOSFET on Resistance RDS (on) VGS = 10 V, ID = 15 A − 55 74 m Ω Forward Transfer Admittance Yfs VDS = 25 V, ID = 15 A 8 16 − S Diode Forward Voltage VDSF IDR = 30 A, VGS = 0 − − -1.5 V Input Capacitance Output Capacitance Reverse Transfer Capacit |
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Panasonic |
Silicon N-channel enhancement MOS FET Gate-source surrender voltage VGSS : ±30 V guaranteed Avalanche energy capability guaranteed: EAS > 801 mJ High-speed switching: tf = 88 ns (typ.) Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender vo |
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Panasonic |
Gate Resistor installed Dual N-Channel MOS FET y Low Source-source On-state Resistance:RSS(on)typ. = 8.7 mΩ（VGS = 4.5 V) y CSP package:smallest & thinnest size y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol:31 Packaging FC6A21060L Embossed type (T |
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Panasonic Semiconductor |
4-channel linear driver • Little phase delay due to current feedback method (2-channel for actuator) • Channels for loading motor (H-bridge system) are available for three modes of forward rotation, reverse rotation and braking • Muting SW with 2 modes: A loading channel is |
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Panasonic Semiconductor |
Dual Channel SEPP Power Amplifier +0.15 (12.5) 1.45±0.15 1.2±0.1 (1.2) 19.1±0.3 21.9±0.3 HSIP012-P-0000A s Applications • TV s Block Diagram Att. Att. con Protection circuit Temperature Over voltage Over current Load short Ripple filter 10 Standby 11 12 1 2 3 GND 4 (I |
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Desde 2024. D4U Semiconductor.
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