2SK2751 |
Part Number | 2SK2751 |
Manufacturer | Panasonic Semiconductor |
Description | Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 ... |
Features |
q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.1 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −40 10 2 200 150 −55 to +150 Unit V mA mA mW °C °C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: HS s Electrical Characteristics... |
Document |
2SK2751 Data Sheet
PDF 30.93KB |
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