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2SK601 |
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| Part Number | 2SK601 |
| Manufacturer | Panasonic Semiconductor |
| Description | Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL... |
| Features |
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45˚
1.0 –0.2 +0.1 0.4±0.08 4.0 –0.20 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 0.5±0.08 1.5±0.1 3.0±0.15 0.4±0.04 Symbol VDS VGSO ID IDP PD * Ratings 80 20 ±0.5 ±1 1 150 −55 t... |
| Document |
 2SK601 Data Sheet
PDF 35.01KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK600 |
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| 2 | 2SK602 |
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| 3 | 2SK603 |
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| 4 | 2SK604 |
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| 5 | 2SK61 |
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| 6 | 2SK610 |
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Desde 2024. D4U Semiconductor.
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