| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Pan Jit International |
100V P-Channel Enhancement Mode MOSFET RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), [email protected],ID@-3A<230mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding co |
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Pan Jit International |
PJD09N03 • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Vo |
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Pan Jit International |
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR • Maximum capacitance @ 0 Vdc Bias of 1.2 pF between terminals 1-3 or terminals 2-3 • IEC61000-4-2 esd 15kV Air, 8kV contact compliance • In compliance with EU RoHS 2002/95/EC directives 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) MECHANICALDA |
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Pan Jit International |
600V N-Channel MOSFET RDS(ON), VGS@10V,ID@1A<4.4Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. 600 V C |
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Pan Jit International |
100V P-Channel Enhancement Mode MOSFET RDS(ON), VGS@-10V,ID@-7A<140mΩ RDS(ON), [email protected],ID@-3A<170mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding co |
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Pan Jit International |
100V N-Channel Enhancement Mode MOSFET RDS(ON), VGS@10V,ID@30A<22mΩ High switching speed Improved dv/dt capability Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) TO-252 TO |
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Pan Jit International |
60V P-Channel Enhancement Mode MOSFET RDS(ON), VGS@-10V,ID@-7A<115mΩ RDS(ON), [email protected],[email protected]<160mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead fre |
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Pan Jit International |
100V N-Channel Enhancement Mode MOSFET RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) , [email protected], ID@15A<28.5mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as |
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Pan Jit International |
60V N-Channel Enhancement Mode MOSFET RDS(ON) , VGS@10V, ID@30A<10mΩ High switching speed Improved dv/dt capability Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanica |
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Pan Jit International |
100V N-Channel MOSFET RDS(ON), VGS@10V,[email protected]<152mΩ RDS(ON), [email protected],[email protected]<158mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding co |
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Pan Jit International |
700V N-Channel MOSFET RDS(ON), VGS@10V,ID@2A<2.8Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halog |
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Pan Jit International |
N-Channel MOSFET RDS(ON), VGS@10V,ID@3A<0.95 Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Haloge |
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Pan Jit International |
N-Channel Enhancement Mode MOSFET • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Vo |
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Pan Jit International |
N-Channel Enhancement Mode MOSFET • RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), [email protected],[email protected]=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Curren |
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Pan Jit International |
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR • Maximum capacitance @ 0 Vdc Bias of 1.2 pF between terminals 1-3 or terminals 2-3 • IEC61000-4-2 esd 15kV Air, 8kV contact compliance • In compliance with EU RoHS 2002/95/EC directives 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) MECHANICALDA |
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Pan Jit International |
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR • Maximum capacitance @ 0 Vdc Bias of 1.2 pF between terminals 1-3 or terminals 2-3 • IEC61000-4-2 esd 15kV Air, 8kV contact compliance • In compliance with EU RoHS 2002/95/EC directives 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) MECHANICALDA |
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Pan Jit International |
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR • Maximum capacitance @ 0 Vdc Bias of 1.0 pF between terminals 1-3 or terminals 2-3 • IEC61000-4-2 esd 15kV Air, 8kV contact compliance • In compliance with EU RoHS 2002/95/EC directives 0.004(0.10)MAX. MECHANICAL DATA • Case: SOT-23, plastic • Term |
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Pan Jit International |
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR • Maximum capacitance @ 0 Vdc Bias of 1.0 pF between terminals 1-3 or terminals 2-3 • IEC61000-4-2 esd 15kV Air, 8kV contact compliance • In compliance with EU RoHS 2002/95/EC directives 0.004(0.10)MAX. MECHANICAL DATA • Case: SOT-23, plastic • Term |
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Pan Jit International |
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR • Improved leakage current, maximum of 20 µA @ 5Vdc • Maximum capacitance @ 0 Vdc Bias of 1.2 pF between terminals 1-3 or terminals 2-3 • IEC61000-4-2 esd 15kV Air, 8kV contact compliance • IEC61000-4-5 lightning 5 Amps peak, 8x20 usec waveform • In |
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Pan Jit International |
Low Capacitance TVS Diode Array Maximum Capacitance of 1.2pF at 0Vdc 1MHz Line-to-Ground Maximum Leakage Current of 1.0µA @ VRWM Industry Standard SMT Package SOT563 IEC61000-4-2 Full Compliance; 15kV Air, 8kV Contact* 100% Tin Matte finish (LEAD-FREE PRODUCT) 6 3 Line1 Gnd 5 L |
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Desde 2024. D4U Semiconductor.
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