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PJD50N10AL |
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| Part Number | PJD50N10AL |
| Manufacturer | Pan Jit International |
| Description | PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) , [email protected], ID@15A<28.5mΩ Advanced Trench Process Technology ... |
| Features |
RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) , [email protected], ID@15A<28.5mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252 Case : TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ... |
| Document |
 PJD50N10AL Data Sheet
PDF 411.61KB |
Similar Datasheet
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| 1 | PJD50N10AL-AU |
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Desde 2024. D4U Semiconductor.
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