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PJD09N03 |
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| Part Number | PJD09N03 |
| Manufacturer | Pan Jit International |
| Description | www.DataSheet4U.com PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density... |
| Features |
• RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-202,Method 208 • Marking : 09N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ... |
| Document |
 PJD09N03 Data Sheet
PDF 168.40KB |
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