ON Semiconductor SC4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C4458	Sanyo Semiconductor Corporation	2SC4458 · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4458] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0
2	2SC461	Hitachi Semiconductor	Silicon NPN Transistor B dB dB Unit V V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f
3	C4242	Mospec Semiconductor	2SC4242
4	C4212	Panasonic Semiconductor	2SC4212 I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj
5	2SC4253	Toshiba Semiconductor	Silicon NPN Transistor mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 25 ¾ ¾ V 20 70 200 ¾ ¾ 0.2 V ¾ ¾ 1.5 ¾ 1.1 1.6 pF ¾ ¾ 25 ps 250 600 ¾ MHz Marking 1 2003-03-19
6	2SC458	Hitachi Semiconductor	NPN TRANSISTOR — — — 0.5 0.5 320 0.2 0.75 — 3.5 10 — — — — µS V V MHz pF dB kΩ × 10 –6 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE
7	2SC4463	Hitachi Semiconductor	Silicon NPN Transistor 0 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz f OSC = 230 Mhz (0 dBm), f out = 30 MHz Conversion gain Noise figure Note: Marking is “HC”. CG NF — — 2
8	2SC4005	Inchange Semiconductor	Silicon NPN Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-Emitter Voltage IC=1mA ; RBE=∞ 42 58 V VCBO Collector-Emitter Sustaining Voltage IC= 0.1mA ;I 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=
9	C4572	Sanyo Semiconductor	2SC4572 · High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process). www.DataSheet4U.com 3.6 Package Dimensions unit:mm 2010C [2SC4572] 10.2 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 2.7 Specifications Absol
10	C4148	Inchange Semiconductor	2SC4148 tor-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At
11	2SC4249	Toshiba Semiconductor	Silicon NPN Transistor VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCC = 12 V, VAGC = 1.4 V f = 200 MHz (Figure 1) VCC = 12 V, GR = 30dB f = 200 MHz ¾ ¾ 100 nA ¾ ¾ 100 nA 30 ¾ ¾ V 60 150 300 ¾ 0.35 0.5
12	C4108	Sanyo Semiconductor	2SC4108 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2022A [2SC4108] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0
13	C4204	Sanyo Semiconductor Corporation	2SC4204 · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=0.7A). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifica
14	C4408	Toshiba Semiconductor	2SC4408
15	C4367	Hitachi Semiconductor	2SC4367 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Co
16	2SC4793	Toshiba Semiconductor	NPN TRANSISTOR esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1
17	2SC4226	Inchange Semiconductor	Silicon NPN Transistor VEB= 1V;IC= 0 hFE DC Current Gain IC= 7mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V Cre Output Capacitance Ie= 0 ; VCB= 10V, ftest= 1MHz VCE=3V,IC=3mA,f=1GHz \|S21\|2 Power Gain VCE=3V,IC=5mA,f=1GHz VCE=3V,IC=7mA,f=1GHz
18	2SC4046	Hitachi Semiconductor	Silicon NPN Transistor t Collector output capacitance Note: Grade hFE V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob 250 — — — — V V MHz pF I C = 200 mA, IB = 20 mA VCE = 10 V, IC = 50 mA VCB = 30 V, f = 1 MHz, IE = 0 1. The 2SC4046 is grouped by h FE as follows. D 250 to 500
19	2SC4766	Inchange Semiconductor	Silicon NPN Transistor OL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.3A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.3A ICBO Collector
20	2SC4197	Inchange Semiconductor	Silicon NPN Transistor B= 4mA ICBO Collector Cutoff Current VCB= 15V; IE= 0 ICEO Collector Cutoff Current VCE= 13V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE DC Current Gain IC= 5mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V