Busque con el número de pieza junto con el fabricante o la descripción
2SC4766 |
Click to view a larger image
| Part Number | 2SC4766 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
OL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 300mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.3A
ICBO
Collector Cutoff Current
VCB= 1700V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 4.5A
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
COB
Output Capacitance
Switching times; Resistive load
IE=0 ; VCB=10V; ftest=1... |
| Document |
 2SC4766 Data Sheet
PDF 192.16KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|