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| Part Number | C4367 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltag... |
| Features |
µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
2
2SC4367
Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) 24
140 120 100
30
400
18
80
12
60
200
40
6
IB = 20 µA
0
50 100 150 Ambient Temperature Ta (°C)
0
4 8 12 16 10 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 100 50 Collector Current IC (mA) DC Current Transfer Ratio hFE VCE = 10 V Pulse 1,000 500
DC Current Transfer Ratio vs. Collector Cu... |
| Document |
 C4367 Data Sheet
PDF 28.68KB |
Desde 2024. D4U Semiconductor.
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