| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Sanyo Semiconductor Corporation |
2SC3552 · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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Toshiba Semiconductor |
2SC3279 se breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = |
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Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Toshiba Semiconductor |
2SC3074 tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i. |
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Mitsubishi Electric Semiconductor |
NPN Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor ector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=2.4A VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=2.4A ICBO Collector Cutoff |
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Inchange Semiconductor |
Power Transistor 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC |
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Toshiba Semiconductor |
2SC3381 |
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Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR .e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) an |
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Hitachi Semiconductor |
2SC3374 |
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Toshiba Semiconductor |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) |
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Toshiba Semiconductor |
2SC3657 |
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Silan Semiconductors |
PROGRAMMABLE CALCULATOR * Monolithic CMOS structure * Scientific operation * Statistic operation * Fraction operation * Coordinate transform * Conversion and operation between Decimal and hex * Editing input operation * Independent memory M * Memories A, B, C, D, E, F, X, Y |
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Inchange Semiconductor |
Silicon NPN Transistor BO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= |
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Inchange Semiconductor |
Silicon NPN RF Transistor BO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S |
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Toshiba Semiconductor |
2SC3327 |
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Vitesse Semiconductor |
6.5 Gbps 144 x 144 Asynchronous Crosspoint Switch ` 6.5 Gbps 144 × 144 strictly nonblocking switch matrix with multicast and output striping programming modes ` Input signal equalization (ISE) with programmable control globally or on a per-channel basis ` Adjustable output pre-emphasis EQ ` Differe |
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Silan Semiconductors |
FM/AM TUNER FREQUENCY & CLOCK DISPLAY DRIVER * FM input with pre-scalar for radio frequency up to 150 MHz * AM input for radio frequency up to 30 MHz * 3 common, 13 segment, 1/3 bias LCD display drivers which supports 4 digits LCD display * On chip oscillator for external 32.768kHz crystal * 10 |
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Desde 2024. D4U Semiconductor.
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