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C3074 |
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| Part Number | C3074 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • Hi... |
| Features |
tage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-08-27
Electrical Characteristics (Ta = 25°C)
2SC3074
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output... |
| Document |
 C3074 Data Sheet
PDF 162.47KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3070 |
Sanyo Semiconductor Corporation |
2SC3070 |
|
| 2 | C3071 |
Sanyo Semicon Device |
2SC3071 |
|
| 3 | C3072 |
Toshiba |
2SC3072 |
|
| 4 | C30724E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode |
|
| 5 | C30724P |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode |
|
| 6 | C30737E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode |
|
Desde 2024. D4U Semiconductor.
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