ON Semiconductor SA1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	A1013	Toshiba Semiconductor	2SA1013 ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han
2	A1837	Toshiba Semiconductor	2SA1837 EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.
3	A1930	Toshiba Semiconductor	2SA1930 opriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-06-15 ht
4	2SA1943	Inchange Semiconductor	POWER TRANSISTOR DITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V -1.5 V ICBO Colle
5	2SA1186	Inchange Semiconductor	POWER TRANSISTOR ollector-Emitter Voltage Breakdown IC= -25mA ; IB= 0 Saturation IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance
6	A1941	Toshiba Semiconductor	2SA1941 c.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. relia
7	2SA1757	Inchange Semiconductor	POWER TRANSISTOR Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VCE(sa
8	A1048	Toshiba Semiconductor	2SA1048 the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De
9	2SA1695	Inchange Semiconductor	POWER TRANSISTOR ge IC= -5A; IB= -0.5A B -0.5 V ICBO Collector Cutoff Current VCB= -140V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1
10	2SA1015	Toshiba Semiconductor	Silicon NPN TRANSISTOR cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
11	A1263	Toshiba Semiconductor	2SA1263 . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collec
12	2SA1837	Toshiba Semiconductor	Silicon PNP Transistor EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.
13	A1160	Toshiba Semiconductor	2SA1160 gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
14	2SA1943	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • High Current Capability: IC = -17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5200/FJL4315. • Full the
15	2SA1215	Inchange Semiconductor	POWER TRANSISTOR age IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V  hFE Classifications O P Y 50-100 70-140 90-180 2SA1215 MIN TYP. MAX UNIT -160
16	2SA1943	Thinki Semiconductor	150 Watt Silicon PNP Power Transistors CONDITIONS MIN TYP. MAX UNIT ® SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -230 V VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A -3.0 V VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V ICBO Coll
17	2SA1150	Toshiba Semiconductor	TRANSISTOR viewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C)
18	2SA1191	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor 0.1 –0.1 800 Min Typ Max — — — –0.1 –0.1 800 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA2 I C = –10 mA, I B = –1 mA2 Min –90 –90 –5
19	A1020	Toshiba Semiconductor	2SA1020 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB
20	A1680	Toshiba Semiconductor	2SA1680 ating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Conc