A1020 Datasheet. existencias, precio

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A1020 PNP Transistor

A1020


A1020
Part Number A1020
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A1020

Toshiba Semiconductor
A1020
Part Number A1020
Manufacturer Toshiba Semiconductor
Title 2SA1020
Description 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm Maximum Ra.
Features 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Weight: 0.36 g (typ.) Min ⎯ ⎯ −50 70 40 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 40 0.1 Max −1.0 −1.0 ⎯ 240 ⎯ −0.5 −1.2 ⎯ ⎯ ⎯ .

A1020

ON Semiconductor
A1020
Part Number A1020
Manufacturer ON Semiconductor
Title One Watt High Current PNP Transistor
Description 2SA1020 One Watt High Current PNP Transistor Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VCE 50 Vdc.
Features
• This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VCE 50 Vdc VCB 50 Vdc VEB 5.0 Vdc IC 2.0 Adc PD 900 mW 5.0 mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating .

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