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A1013 |
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| Part Number | A1013 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2S. |
| Features | ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Colle. |
| Datasheet |
 A1013 Data Sheet
PDF 159.90KB |
| Distributor | Stock | Price | Buy |
|---|
A1013 |
| Part Number | A1013 |
| Manufacturer | Shanghai |
| Title | Silicon PNP Epitaxial Transistor |
| Description | :The A1013 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×26. |
| Features |
●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakd. |
A1013 |
| Part Number | A1013 |
| Manufacturer | UTC |
| Title | 2SA1013 |
| Description | The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * High DC current gai. |
| Features | * High BVCEO * High DC current gain * Large continuous collector current capability ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B 2SA1013G-x-T9N-B 2SA1013L-x-T9N-K 2SA1013G-x-T9N-K Package SOT-89 TO-92 TO-92 TO-92NL TO-92NL Pin assignment 123 BCE BC. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | A101 |
Tyco Electronics |
5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER |
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| 2 | A101 |
MA-COM |
Cascadable Amplifier |
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| 3 | A1010B |
Actel Corporation |
(A1010B / A1020B) FPGAs |
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| 4 | A1011 |
Wing Shing Computer |
2SA1011 |
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| 5 | A1012 |
Toshiba Semiconductor |
PNP Epitaxial Silicon Transistor |
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| 6 | A1012 |
UTC |
2SA1012 |
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| 7 | A1015 |
DOESHARE |
Plastic-Encapsulate Transistors |
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| 8 | A1015 |
WEITRON |
PNP General Purpose Transistors |
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| 9 | A1015 |
ON Semiconductor |
PNP Epitaxial Silicon Transistor |
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| 10 | A1015 |
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PNP general purpose transistor |
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Desde 2024. D4U Semiconductor.
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