Busque con el número de pieza junto con el fabricante o la descripción
A1015 |
Click to view a larger image
| Part Number | A1015 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Low. |
| Features | cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = −50 V, . |
| Datasheet |
 A1015 Data Sheet
PDF 166.72KB |
| Distributor | Stock | Price | Buy |
|---|
A1015 |
| Part Number | A1015 |
| Manufacturer | Jiangsu Changjiang |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltag. |
| Features | Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -50 -50 -5 -150 400 -55-150 Units V V V mA mW ℃ 2.COLLECTOR 3.BASE 1 2 3 *These ratings are limiting values above which . |
A1015 |
| Part Number | A1015 |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | Elektronische Bauelemente A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor FEATURES Power Dissipation CLASSIFICATION OF hFE Product-Rank A1015-O Range 70~140 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 GH A1015-Y 120~240 A1015-GR 200~400 J AD B K E C. |
| Features | Power Dissipation CLASSIFICATION OF hFE Product-Rank A1015-O Range 70~140 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 GH A1015-Y 120~240 A1015-GR 200~400 J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Collect. |
A1015 |
| Part Number | A1015 |
| Manufacturer | Elite |
| Title | PNP Epitaxial Silicon Transistor |
| Description | A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Co. |
| Features | in Max -50 -50 -0.1 -0.1 70 400 -0.3 -1.1 -1.45 80 hFE CLASSIFICATION Classification O hFE 70-140 Y 120-240 GR 200-400 Unit V V µA µA V V V MHz Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Part No.: A1015 Page: 1 / 1 . |
A1015 |
| Part Number | A1015 |
| Manufacturer | NXP |
| Title | PNP general purpose transistor |
| Description | PNP transistor in a plastic TO-92; SOT54 package. NPN complement: 2PC1815. 1 handbook, halfpage 2PA1015 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating Syst. |
| Features |
• Low current (max. 150 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: 2PC1815. 1 handbook, halfpage 2PA1015 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the A. |
A1015 |
| Part Number | A1015 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bul. |
| Features |
• Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3L TO-92 3L Packing Method Ammo Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximu. |
A1015 |
| Part Number | A1015 |
| Manufacturer | DOESHARE |
| Title | Plastic-Encapsulate Transistors |
| Description | SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES • Complementary to C1815 • Power Dissipation of 200mW • High Stability and High Reliability • SOT-23 Small Outline Plastic Package • Epoxy UL: 94V-0 • Mounting Position: Any MARKING : BA SOT-23 Package 1. BASE 2. EMITTER 3. COLLECTOR Maximum Rat. |
| Features |
• Complementary to C1815 • Power Dissipation of 200mW • High Stability and High Reliability • SOT-23 Small Outline Plastic Package • Epoxy UL: 94V-0 • Mounting Position: Any MARKING : BA SOT-23 Package 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Collector-Base Voltage Symbol VCBO Value -5. |
A1015 |
| Part Number | A1015 |
| Manufacturer | WEITRON |
| Title | PNP General Purpose Transistors |
| Description | PNP General Purpose Transistors P b Lead(Pb)-Free A1015 TO-92 1. EMITTER 1 2. COLLECTOR 3. BASE 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V. |
| Features | -50 V V(BR)EBO - -5.0 V ICBO - -0.1 µA ICEO - -0.1 µA IEBO - -0.1 µA WEITRON 1/4 http://www.weitron.com.tw 14-Feb-06 A1015 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE=-6.0V, IC=-2.0mA Collector-Emitter Saturation Voltage IC=-100mA, IB=-10mA Base-Emitter Voltage IC. |
A1015 |
| Part Number | A1015 |
| Manufacturer | ON Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | 98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components. |
| Features |
• Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage −50 V VCEO Collector−Emitter Voltage −50 V VEBO Emitter−Base Voltage −5 V IC Collector Current −150 mA . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | A101 |
Tyco Electronics |
5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER |
|
| 2 | A101 |
MA-COM |
Cascadable Amplifier |
|
| 3 | A1010B |
Actel Corporation |
(A1010B / A1020B) FPGAs |
|
| 4 | A1011 |
Wing Shing Computer |
2SA1011 |
|
| 5 | A1012 |
Toshiba Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 6 | A1012 |
UTC |
2SA1012 |
|
| 7 | A1013 |
UTC |
2SA1013 |
|
| 8 | A1013 |
Shanghai |
Silicon PNP Epitaxial Transistor |
|
| 9 | A1013 |
Toshiba Semiconductor |
2SA1013 |
|
| 10 | A1015GR |
ON Semiconductor |
PNP Epitaxial Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
|