ON Semiconductor NP- Hoja de datos

No.	parte #	Fabricante	Descripción
1	C5198	Toshiba Semiconductor	Silicon NPN Transistor hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
2	74HC595	ON Semiconductor	8-Bit Serial-Input/Serial or Parallel-Output Shift Register • Output Drive Capability: 15 LSTTL Loads • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 2.0 to 6.0 V • Low Input Current: 1.0 mA • High Noise Immunity Characteristic of CMOS Devices • In Compliance with the Requiremen
3	E13007	Fairchild Semiconductor	NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I
4	2SC1815	Toshiba Semiconductor	Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de
5	J13007-2	Fairchild Semiconductor	High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU
6	A1015	Toshiba Semiconductor	Silicon PNP Transistor cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
7	C2383	Toshiba Semiconductor	Silicon NPN Transistor (2SC2383) in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabili
8	C4793	Toshiba Semiconductor	Silicon NPN Transistor esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1
9	FSW25N50A	InPower Semiconductor	N-Channel MOSFET 0pF,R=1.5K: 6000 V TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 *Drain Current limited
10	2SC3105	Mitsubishi Electric Semiconductor	NPN EPITAXIAL PLANAR TYPE TRANSISTOR
11	2N3904	ON Semiconductor	NPN Transistor • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Devi
12	7432	Fairchild Semiconductor	Quad 2-Input OR Gate C Note 1: The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not gu
13	D209L	Inchange Semiconductor	Silicon NPN Power Transistor O Emitter Cutoff Current VEB= 7V; IC=0 hFE1 DC Current Gain IC=5A ; VCE= 5V hFE2 DC Current Gain IC=8A ; VCE= 5V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A fT Curren
14	MJE340	Inchange Semiconductor	Silicon NPN Power Transistor STICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA;
15	7486	Fairchild Semiconductor	Quad 2-Input Exclusive-OR Gate not guaranteed at the absolute maximum ratings. The “Recommended Operating Conditions” table will define the conditions for actual device operation. Recommended Operating Conditions Symbol VCC VIH VIL IOH IOL TA Parameter Supply Voltage HIGH Level I
16	A928A	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A928A OA928A Y- 1 TO-92L 1. Emitter 2. Collector 3. Base Package TO-92 3L TO-92 3L Packing Method Ammo Am
17	SN74LS00	ON Semiconductor	Quad 2-Input NAND Gate Power Supply Current ICC Total, Output HIGH Total, Output LOW 1.6 4.4 mA VCC = MAX – 20 – 0.4 –100 0.5 20 V µA mA mA mA IOL = 8.0 mA 0.4 Min 2.0 0.8 – 1.5 Typ Max Unit V V V V V Test Conditions Guaranteed Input HIGH Voltage for All Inputs Guaranteed
18	2SC5200	Toshiba Semiconductor	NPN TRANSISTOR solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a
19	2N5551	ON Semiconductor	NPN Amplifier • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit VCEO Collector−Emitter Voltage 160 V VCBO Collector−Base Voltage 180 V VEBO Emitter−Base Voltage 6 V
20	2N2222	ON Semiconductor	NPN Amplifier Transistor • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.0 Collector Current − Continuous T