Busque con el número de pieza junto con el fabricante o la descripción
D209L |
Click to view a larger image
| Part Number | D209L |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Hi... |
| Features |
O Emitter Cutoff Current
VEB= 7V; IC=0
hFE1 DC Current Gain
IC=5A ; VCE= 5V
hFE2 DC Current Gain
IC=8A ; VCE= 5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
fT Current Gain Bandwidth Product
VCE=10V,IC=100mA,f=1MHZ
Switching times
ts Storage Time tf Fall Time
IC= 8A , IB1= -IB2= 1.6A
MIN TYP. MAX UNIT 400 V 700 V
0.01 mA 8 40 6 30
1.0 V 1.2 V 5 MHZ
3.0 μs 0.7 μs
isc website：www.iscsemi.cn
2
... |
| Document |
 D209L Data Sheet
PDF 198.23KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|