C5198 |
Part Number | C5198 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use i... |
Features |
hin the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1994-06
1
2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition... |
Document |
C5198 Data Sheet
PDF 149.68KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | C5191 |
NEC |
2SC5191 | |
2 | C5194 |
NEC |
2SC5194 | |
3 | C5195 |
NEC |
2SC5195 | |
4 | C5196 |
Toshiba Semiconductor |
2SC5196 | |
5 | C5197 |
Toshiba Semiconductor |
2SC5197 | |
6 | C5198 |
CDIL |
POWER TRANSISTORS | |
7 | C5199 |
Toshiba Semiconductor |
2SC5199 | |
8 | C5100 |
Sanken electric |
Silicon NPN Transistor | |
9 | C5101 |
Sanken electric |
2SC5101 | |
10 | C5103 |
ROHM Electronics |
2SC5103 |