| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
N-Channel MOSFET |
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ON Semiconductor |
Power MOSFET • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • These are Pb−Free Devices* MAX |
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ON Semiconductor |
Power Field Effect Transistor ature http://onsemi.com TMOS POWER FET 6.0 AMPERES, 600 VOLTS RDS(on) = 1.2 W TO−220AB CASE 221A−09 Style 5 D G S © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 7 1 Publication Order Number: MTP6N60E/D MTP6N60E MAXIMUM RATING |
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ON Semiconductor |
Power MOSFET Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 100 100 ± 20 ± 40 40 29 140 169 1.35 Operating and Storage Temperatur |
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ON Semiconductor |
Power MOSFET 23 Amps ergy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 23 Apk, L = 3.0 mH, RG = 25 Ω) Thermal Resistance – Junction to Case Thermal Resistance – Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seco |
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Fairchild Semiconductor |
(MTP2N35 / MTP2N40) N-Channel Power MOSFETs |
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Fairchild Semiconductor |
N-Channel MOSFET |
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ON Semiconductor |
Power MOSFET • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature |
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ON Semiconductor |
TMOS E-FET 3.0 AMPERES, 500 VOLTS RDS(on) = 3.0 W TO−220AB CASE 221A−06 Style 5 D ®G S © Semiconductor Components Industries, LLC, 2006 1 August, 2006 − Rev. 2 Publication Order Number: MTP3N50E/D MTP3N50E MAXIMUM RATINGS (TC = 25°C unless otherwise note |
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Motorola Semiconductor |
Power Field Effect Transistor |
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Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs |
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Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor |
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Fairchild Semiconductor |
(MTP20N08 / MTP20N10) N-Channel Power MOSFETs |
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Motorola Semiconductor |
Power Field Effect Transistor |
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Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical |
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ON Semiconductor |
N-Channel Power MOSFET cified at Elevated Temperature D S MTP8N50E TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM CASE 221A−09, Style 5 TO-220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW |
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ON Semiconductor |
Power MOSFET g and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 15 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance − Junction to Case Thermal Resistance − Junc |
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ON Semiconductor |
Power MOSFET 27 Operating and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 5 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance − Junction to Case Thermal Re |
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ON Semiconductor |
Power MOSFET (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs) ID ID IDM 6.0 3.9 21 Total Power Dissipation Derate above 25°C PD 75 0.6 Operating and Storage Temperature Range TJ, Tstg −55 to 150 |
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ON Semiconductor |
High Energy Power FET 5.0 AMPERES, 400 VOLTS RDS(on) = 1.0 W TO−220AB CASE 221A−06 Style 5 D ®G S Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — |
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Desde 2024. D4U Semiconductor.
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